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| (R) STPS16150CT/CG/CR HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj VF (max) 2x8A 150 V 175C 0.75 V K A1 A2 A1 K A2 FEATURES AND BENEFITS s I2PAK STPS16150CR K s s s HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT AVALANCHE CAPABILITY SPECIFIED A2 A1 A2 K A1 DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. D2PAK STPS16150CG TO-220AB STPS16150CT ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current TO-220AB = 0.5 D2PAK / I2PAK Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature Critical rate of rise of reverse voltage Tc = 150C per diode per device tp = 10 ms sinusoidal tp = 1s Tj = 25C Value 150 20 8 16 150 4700 - 65 to + 175 175 10000 Unit V A A A W C C V/s July 2003 - Ed: 6C 1/5 STPS16150CT/CG/CR THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Junction to case Parameter TO-220AB / D PAK / I PAK TO-220AB / D2PAK / I2PAK 2 2 Value Per diode Total Coupling 3 1.8 0.6 Unit C/W When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 5 ms, < 2% ** tp = 380 s, < 2% Min. Typ. Max. 3.0 4.0 0.92 Unit A mA V VR = VRRM IF = 8 A IF = 8 A IF = 16 A IF = 16 A 0.8 0.70 0.75 1 0.86 To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.014 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 8 7 6 5 4 3 2 1 0 0 1 2 3 4 IF(av) (A) 5 6 7 =tp/T T Fig. 2: Average forward current versus ambient temperature ( = 0.5, per diode). IF(av)(A) = 0.05 = 0.1 = 0.2 = 0.5 =1 tp 8 9 10 9 8 7 6 5 4 3 2 1 0 Rth(j-a)=Rth(j-c) Rth(j-a)=15C/W T =tp/T tp Tamb(C) 50 75 100 125 150 175 0 25 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 2/5 STPS16150CT/CG/CR Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). IM(A) 120 100 80 Fig. 46 Relative variation of thermal impedance junction to case versus pulse duration (per diode). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 = 0.5 60 40 IM Tc=50C Tc=75C 0.4 0.2 = 0.2 = 0.1 T 20 0 1E-3 Tc=125C t =0.5 t(s) 1E-2 1E-1 1E+0 Single pulse tp(s) 1E-2 1E-1 0.0 1E-3 =tp/T tp 1E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(A) 1E+5 1E+4 1E+3 1E+2 Tj=75C Tj=175C Tj=150C Tj=125C Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 1000 F=1MHz Tj=25C 100 1E+1 1E+0 1E-1 0 VR(V) 25 50 Tj=25C VR(V) 10 100 125 150 75 1 2 5 10 20 50 100 200 Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 100.0 Tj=125C Typical values Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thckness: 35m) (STPS16150CG only). Rth(j-a) (C/W) 80 70 60 10.0 Tj=125C Tj=25C 50 40 30 20 10 0 0 2 4 6 8 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 S(cm) 10 12 14 16 18 20 3/5 STPS16150CT/CG/CR PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Millimeters Min. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 PACKAGE MECHANICAL DATA I2PAK DIMENSIONS REF. A E L2 c2 Millimeters Min. Max. 4.60 2.69 0.93 1.17 1.17 0.60 1.36 9.35 2.70 10.4 13.6 3.78 1.40 4.40 2.49 0.70 1.14 1.14 0.45 1.23 8.95 2.40 10.0 13.1 3.48 1.27 Inches Min. 0.173 0.098 0.028 0.044 0.044 0.018 0.048 0.352 0.094 0.394 0.516 0.137 0.050 Max. 0.181 0.106 0.037 0.046 0.046 0.024 0.054 0.368 0.106 0.409 0.535 0.149 0.055 A A1 b b1 b2 c c2 D D L1 b2 L b1 b e 4/5 A1 e E L L1 c L2 STPS16150CT/CG/CR PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. A E L2 C2 Millimeters Min. Typ. Max. Min. 4.60 0.169 2.69 0.098 0.23 0.001 0.93 0.027 1.40 4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0.40 0 8 0 Inches Typ. Max. 0.181 0.106 0.009 0.037 0.024 0.054 0.368 0.405 0.208 0.624 0.055 0.069 0.016 8 A A1 A2 D L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R B B2 C C2 D E G L L2 L3 R V2 0.049 0.055 0.60 0.017 1.36 0.047 9.35 0.352 10.28 0.393 5.28 0.192 15.85 0.590 1.40 0.050 1.75 0.055 FOOT PRINT DIMENSIONS (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 Ordering type STPS16150CT STPS16150CG STPS16150CG-TR STPS16150CR s Marking STPS16150CT STPS16150CG STPS16150CG STPS16150CR Package TO-220AB D2PAK D2PAK I2PAK Weight 2.2 g 1.48 g 1.48 g 1.49 g Base qty 50 50 1000 50 Delivery mode Tube Tube Tape & reel Tube Epoxy meets UL94, V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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